Regensburg 2013 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 58: Poster Session III (Solid-liquid interfaces; Scanning probe and other methods; Electronic structure theory; Spin-orbit interaction)
O 58.24: Poster
Mittwoch, 13. März 2013, 18:15–21:45, Poster B1
Band bending in the unoccupied electronic structure of Bi2Se3 — •Ch. Langenkämper1, A. Zumbülte1, A. B. Schmidt1, M. Donath1, T. Förster2, P. Krüger2, M. Bianchi3, R. C. Hatch3, P. Hofmann3, J. Mi4, B. B. Iversen4, G. Mussler5, and D. Grützmacher5 — 1Physikalisches Institut, Universität Münster, Germany — 2Institut für Festkörpertheorie, Universität Münster, Germany — 3Department of Physics and Astronomy, Aarhus University, Denmark — 4Department of Chemistry, Aarhus University, Denmark — 5Peter Grünberg Institut, Forschungszentrum Jülich, Germany
We report on angle- and spin-resolved inverse photoemission measurements on the topological insulator Bi2Se3.
Vacancies and adsorbates on surfaces of topological insulators are known to modify the charge density at the surface. The resulting band bending leads to an energetic shift of the bandstructure and the evolution of Rashba-split surface states. With regard to possible future applications and the interpretation of surface reactions, the influence of this band bending on the unoccupied electronic structure plays an important role. Here, we examine the time evolution of the band structure for two different sample systems: an MBE-grown thin film and a bulk crystal. Especially the evolution of new structures due to surface reactions will be discussed on the basis of theoretical calculations. Additionally, we investigate the influence of the threefold crystal symmetry, which causes differences between the surface states in Γ M- and Γ M’-direction.