Regensburg 2013 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 58: Poster Session III (Solid-liquid interfaces; Scanning probe and other methods; Electronic structure theory; Spin-orbit interaction)

O 58.66: Poster

Mittwoch, 13. März 2013, 18:15–21:45, Poster B1

Helium Ion Microscopy as tool to investigate thin layer thicknesses — •Henning Vieker, Karsten Rott, Udo Werner, André Beyer, Günter Reiss, and Armin Gölzhäuser — Bielefeld University, Faculty of Physics, Germany

The recently developed helium-ion microscope allows remarkable surface resolution with the secondary-electron (SE) detector. Simultaneously, backscattered ions can be detected that allow imaging with a substantially higher elemental contrast. This Rutherford backscattered ion (RBI) contrast depends mainly on the elemental composition of the investigated sample surface. The escape depth of backscattered ions is much larger than for secondary electrons. Thus whole layers with a wide range of thicknesses will contribute to a RBI image, whereas the SE image is far more surface sensitive, i.e. insensitive to buried parts under the sample surface.

In this contribution we examine RBI imaging as tool to characterize thickness variations of layered samples with well defined compositions. In a model example the homogeneity of gold layers on silicon substrates is investigated and compared to simulation data. Achievable spatial resolutions as well as the possibilities in using a reference sample to measure layer thicknesses will be addressed. Furthermore, buried layers are investigated.