Regensburg 2013 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 58: Poster Session III (Solid-liquid interfaces; Scanning probe and other methods; Electronic structure theory; Spin-orbit interaction)

O 58.87: Poster

Mittwoch, 13. März 2013, 18:15–21:45, Poster B1

Pulsed spray evaporation CVD of metal thin films: Role of reactor and precursor conditions — •Fedor Strigunov, Volkmar Zielasek, and Marcus Bäumer — Universität Bremen, Institut für Angewandte und Physikalische Chemie, Leobener Str. NW2, 28359 Bremen, Deutschland

A widely employed method to deposit thin films of metals and their compounds is chemical vapor deposition (CVD). A recently developed hydrogen-free approach to metal-CVD uses pulsed spray evaporation (PSE) delivery of simple and commercially available non-toxic metal-organic precursors dissolved in alcohols [1] and ease of use.

We have designed a compact PSE-CVD reactor that is attached to a UHV system for direct transfer to thin film analysis techniques such as XPS, STM, LEED or IR spectroscopy. We will present demonstrate the growth of thin Ni films on various substrates, including silicon oxide, without incubation time and without the need for any metallic seed layer. The efficiency of growth process and the quality of the resulting film strongly depend on several deposition parameters such as concentration of the precursors, deposition pressure, carrier gas flow rate, substrate temperature, deposition duration, spray pulse frequency and pulse width which have to be optimized for each new material and selected precursor. Besides the substrate temperature we have identified the concentration of water in the alcohol-carrier of precursor as very critical for the growth rate and deposition mechanism.

[1] P. A. Premkumar et al., Chem. Vap. Deposition, 13 (2007) 219