Regensburg 2013 – scientific programme
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O: Fachverband Oberflächenphysik
O 77: Electronic Structure and Spin-Orbit Interaction III
O 77.1: Talk
Thursday, March 14, 2013, 16:00–16:15, H33
Surface valence states and stoichiometry of non-superconducting and superconducting FeTe films — •Donald Telesca1,2, Yuefeng Nie1, Joseph Budnick1, Barrett Wells1, and Boris Sinkovic1 — 1University of Connecticut — 2Air Force Research Laboratory
We report the surface electronic structure and stoichiometry of FeTe films following the incorporation of oxygen by three different methods: air exposure, dry oxygen exposure and low temperature oxygen annealing. X-ray photoemission experiments show that oxygen incorporation changes the initial valence state of Fe from 0 to mainly 3+. We also observe that the Te changes valence from initially 0 to mixed 0 and 4+. The rate of valence changes is seen to depend on the method of incorporation. In addition, it is observed that the surface of the FeTe films is left in a Te deficient state following any type of exposure to oxygen.