Regensburg 2013 – scientific programme
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O: Fachverband Oberflächenphysik
O 77: Electronic Structure and Spin-Orbit Interaction III
O 77.3: Talk
Thursday, March 14, 2013, 16:30–16:45, H33
Direct band structure measurement of a buried two-dimensional electron gas: delta-doped Si(001) — Jill Miwa1, Michelle Simmons2, Philip Hofmann1, and •Justin Wells3 — 1Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNano), Aarhus University, 8000 Aarhus C, Denmark. — 2Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW 2052, Australia. — 3Department of Physics, Norwegian University of Science and Technology (NTNU), N-7491 Trondheim, Norway
We directly measure the band structure of a buried two dimensional electron gas (2DEG) using angle resolved photoemission spectroscopy. The buried 2DEG forms 2 nm beneath the surface of p-type silicon, because of a dense delta-type layer of phosphorus n-type dopants which have been placed there. The position of the phosphorous layer is beyond the probing depth of the photoemission experiment but the observation of the 2DEG is nevertheless possible at certain photon energies where emission from the states is resonantly enhanced. This permits direct access to the band structure of the 2DEG and its temperature dependence. This material system has been chosen since delta-doped silicon is not only a testing ground for fundamental physics, but has demonstrated recent successes as a platform for the fabrication of atomic-scale devices for quantum computation applications. The measurement concept presented here should be applicable to a wide range of similarly important buried conductive layers.