Regensburg 2013 – scientific programme
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O: Fachverband Oberflächenphysik
O 79: Oxide Surfaces III
O 79.2: Talk
Thursday, March 14, 2013, 16:15–16:30, H45
In-situ PFM characterization of ferroelectric domain properties of epitaxially BaTiO3(100) ultrathin films on Pt(100) — •Andreas Trützschler1, Maik Christl1, Stefan Förster1, and Wolf Widdra1,2 — 1Institute of Physics, Martin-Luther-Universität Halle-Wittenberg, Halle — 2Max-Planck-Institut für Mikrostrukturphysik, Halle
The combination of ferroelectric and ferromagnetic oxides in heterostructures can lead to new multiferroic materials. For this concept the surface and interface properties are crucial and might deviate from bulk properties [1]. So far nearly all ferroelectric characterizations for thin films of the ferroelectric BaTiO3 have been carried out ex-situ under ambient conditions [2]. In contrast, we present here an in-situ PFM characterization of UHV-prepared BaTiO3(100) thin films which have been grown on Pt(100). Due to the lattice mismatch the film is compressed by 2 % which causes a c-domain configuration [3]. The resulting domain pattern has been locally controlled by applying a DC voltage via the AFM tip. For ultrathin films the ferroelectric properties, especially the local hysteresis curve, indicate an inequivalence of outward and inward polarized c domains.
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S. Förster et al., JCP 135, 104701 (2011).