Regensburg 2013 – scientific programme

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O: Fachverband Oberflächenphysik

O 84: Photovoltaics (jointly with CPP, DS and HL)

O 84.15: Talk

Friday, March 15, 2013, 13:00–13:15, H2

Investigation of carrier traps in pn-junctions of fully-processed silicon photovoltaic cells — •Teimuraz Mchedlidze, Leopold Scheffler, and Jörg Weber — Technische Universität Dresden, 01062 Dresden, Germany

Mesa-diodes with a surface area about 1 mm² and a height of 50 µm were fabricated on top of fully-processed Si photovoltaic-cell wafers for detection and investigation of carrier traps in pn-junctions. All fabrication steps were performed at room temperature and fully preserved the initial structure of the cell inside the mesa-diode. Schottky diodes were fabricated on neighbor locations of the wafers after etching off the PV-cell structure to a depth of 50 µm. The DLTS spectra detected for the mesa- and Schottky-diodes show significant difference, namely the deep carrier traps detected in the mesa-structures were below the detection limit in the Schottky-diodes. Profiling of the trap density for the mesa-diodes showed a steep decrease with increasing distance from the pn-junction. Parameters of the detected traps, their possible origin and reasons for the differences between spectra detected for mesa- and Schottky-diodes are presented and discussed.