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O: Fachverband Oberflächenphysik
O 84: Photovoltaics (jointly with CPP, DS and HL)
O 84.16: Vortrag
Freitag, 15. März 2013, 13:15–13:30, H2
Iron acceptor association in compensated multicrystalline silicon — •Christian Möller1,2, Kevin Lauer1, Fabien Gibaja3, Til Bartel3, and Fritz Kirscht3 — 1CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, SolarZentrum Erfurt, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany — 2TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau, Germany — 3Calisolar GmbH, Magnusstraße 11, 12489 Berlin
Monitoring the acceptor concentration in compensated multicrystalline silicon by a minority-charge carrier lifetime measurement is applicable for production control due to the fast and easy lifetime measurement. The iron acceptor pair association is studied for several acceptors position dependent over the whole height of a compensated multicrystalline ingot. Acceptor pair and height dependent induced differences in the defect kinetics are visible. The calculated position depending doping concentrations of several ingots from charge carrier lifetime measurements are discussed and compared with the expected doping concentration calculated via Scheil equation.