Regensburg 2013 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 90: Semiconductor Substrates
O 90.5: Vortrag
Freitag, 15. März 2013, 11:30–11:45, H45
Cyclooctyne adsorption on clean and hydrogen precovered Si(001) surfaces — •Gerson Mette1, Michael Dürr1,2, Ruben Bartholomäus3, Ulrich Koert3, and Ulrich Höfer1 — 1Fachbereich Physik und Zentrum für Materialwissenschaften, Philipps-Universität, D-35032 Marburg — 2Fakultät Angewandte Naturwissenschaften, Hochschule Esslingen, D-73728 Esslingen — 3Fachbereich Chemie, Philipps-Universität, D-35032 Marburg
The reaction of organic adsorbates on semiconductor surfaces is of special interest with respect to surface functionalization and its use in molecular electronics. Whereas several alkenes and alkynes exhibit well ordered monolayers on Si(001), second- and multilayer attachment is still a central challenge towards successful functionalization.
In this context, the adsorption of cyclooctyne on clean and hydrogen precovered Si(001) surfaces was investigated by means of STM. The adsorption behavior was observed to be similar at room temperature and at low surface temperature of 50 K in contrast to systems like C2H4/Si which adsorb via a mobile precursor state. Moreover, it was found to be insensitive to distorted, hydrogen-induced dangling-bond configurations. At high coverage, cyclooctyne forms well ordered structures on Si(001). Our results suggest a direct adsorption pathway for cyclooctyne on Si(001) most likely governed by the molecule’s triple bond in combination with its high ringstrain. This should make cyclooctyne a good candidate for chemoselective cycloadditions in more complex multifunctional compounds.