Regensburg 2013 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 90: Semiconductor Substrates
O 90.9: Vortrag
Freitag, 15. März 2013, 12:30–12:45, H45
Formation of Lu silicide on Si (111)-7x7 surface: STM/PES study at room temperature and low coverage — •Pavel Shukrynau1, Xu Ying1, Lars Smykalla1, Martin Vondracek2, and Michael Hietschold1 — 1Chemnitz University of Technology, Institute of Physics, Solid Surfaces Analysis Group. D-09107 Chemnitz, Germany — 2Institute of Physics Academy of Sciences of the Czech Republic, Cukrovarnická 10. CZ 162 53 Prague, Czech Republic
Interaction of very small amounts of lutetium with Si (111)-7x7 reconstructed surface was investigated in detail using combination of Scanning Tunneling Microscopy/Spectroscopy and Photoelectron Spectroscopy. Two distinct types of nanoclusters were found in the initial growth of the Lu/Si interface: the clusters of the first type have well defined globular shape with the average size of about 1 nm and are tightly bound to the underlying substrate. Other type of clusters is not homogeneous, showing a motion inside one half of the 7x7-unit cell. Analysis of photoelectron spectra of the Si 2p core levels shows core level binding energy shifts and intensity variations of Si surface related components, which clearly indicate that the reaction starts already at room temperature. Comparison of tunneling spectra with valence band PES data allows to determine the electronic structure of adsorbed species locally and suggests the formation of Lu-rich silicide.