Regensburg 2013 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 12: Poster Session Superconductivity

TT 12.45: Poster

Montag, 11. März 2013, 15:00–19:00, Poster D

Superconductivity in Ge and Si via Ga-ion implantation — •Richard Skrotzki^{1, 2}, Thomas Herrmannsdörfer¹, Rico Schönemann¹, Viton Heera¹, Jan Fiedler¹, Erik Kampert¹, Frederik Wolff-Fabris¹, Peter Philipp¹, Lothar Bischoff¹, Matthias Voelskow¹, Arndt Mücklich¹, Bernd Schmidt¹, Wolfgang Skorupa¹, Manfred Helm¹, and Joachim Wosnitza¹ — ¹Dresden High Magnetic Field Laboratory (HLD) and Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany — ²Department of Chemistry and Food Chemistry, TU Dresden, 01062 Dresden, Germany

We present current progress of a unique study featuring the origin and use of superconductivity in highly Ga-doped group-IV semiconductors. Thin films have been prepared via ion implantation and subsequent short-term annealing. Germanium offers a high solubility for Ga acceptors (up to 1 at.%). Thus, superconductivity below about 0.5 K has been devoted previously solely to doping. However, recent atom-probe tomography reveals Ga nano-accumulations rendering the possibility of superconductivity in a proximity coupled network. In silicon, we have investigated a 10 nm thin amorphous Ga precipitation layer (T_c = 7 K) that is close to the superconductor to insulator transition. We present high magnetic field measurements up to 40 Tesla and evaluate the critical-field phase diagram. First proof for phase coherence has been detected via magneto-resistance oscillations in lithographically tailored structures. This opens the door for future device fabrication.