Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

TT: Fachverband Tiefe Temperaturen

TT 21: Graphene - Electronic Properties and Transport 1 (jointly with DS, HL, MA, and O)

TT 21.10: Vortrag

Montag, 11. März 2013, 18:15–18:30, H17

sp² carbon hybrid junctions — Pablo Robert^1,2, Renjun Du¹, Fan Wu¹, Kristina Hönes¹, Jens Mohrmann¹, Frank Hennrich¹, Manfred Kappes^1,3,4, Hilbert von Löhneysen^1,2,4,5, and •Romain Danneau^1,2 — ¹Institute of Nanotechnology, Karlsruhe Institute of Technology, — ²Institute of Physics, Karlsruhe Institute of Technology, Germany — ³Institute of Physical Chemistry, Karlsruhe Institute of Technology, Germany — ⁴DFG Center for Functional Nanostructures, Karlsruhe Institute of Technology, Germany — ⁵Institute for Solid-State Physics, Karlsruhe Institute of Technology, Germany

Lowering the contact resistance is a key issue to improve graphene field effect device performance. The connection between a metal and graphene depends on many parameters such as the work function mismatch between the two connected material, the adsorption of the metal on graphene, the quality of the deposited material as well as the strain induced on the graphene sheet. We have studied electronic transport through carbon nanotube (CNT)-graphene and graphene-graphene junctions produced by nano-manipulation and transfer. For the CNT-graphene junctions, we first demonstrate that the influence of the CNT on the charge distribution of the graphene sheet is limited to few nanometers. Our experiments show that the junction transparency is strongly gate dependent due to the variation of the CNT-graphene distance, and the charge carrier injection occurs via a single point. For the graphene-graphene junctions, our measurements show low resistance and prove that graphene makes a good connection to graphene.