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TT: Fachverband Tiefe Temperaturen
TT 21: Graphene - Electronic Properties and Transport 1 (jointly with DS, HL, MA, and O)
TT 21.12: Vortrag
Montag, 11. März 2013, 18:45–19:00, H17
Strong gate hysteresis in graphene on mica field effect devices — •Jens Mohrmann1, Kenji Watanabe2, Takashi Taniguchi2, and Romain Danneau1,3 — 1Institute of Nanotechnology, Karlsruhe Institute of Technology, Germany — 2Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan — 3Institute of Physics, Karlsruhe Institute of Technology, Germany
One of the outstanding properties of graphene is the unbeatable ratio of surface to volume. As a membrane of only one atomic layer of carbon, graphene is extremely sensitive to external influences. The large area contact with the substrate thus causes a large influence of the used substrate on the electronic properties of graphene. Therefore, a lot of effort is being made in order to understand the interaction between graphene and its substrate, and to find new and possibly better materials. One material under investigation is muscovite mica. The layered structure allows perfect basal (001) cleavage with atomically flat terraces, and using mechanical exfoliation, very thin crystals can be created and used as a substrate and gate dielectric. Transport measurements of graphene on mica show a very high hysteresis with respect to the gate voltage. Here, we investigate this effect using dual gated devices, with both mica and hexagonal boron-nitride dielectrics.