Regensburg 2013 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 29: Transport: Quantum Dots, Wires, Point Contacts 3 (jointly with HL)
TT 29.6: Talk
Tuesday, March 12, 2013, 11:15–11:30, H20
Electronic structure and the Aharonov-Bohm effect in inhomogeneous Möbius rings — •V. M. Fomin1, S. Kiravittaya1,2, and O. G. Schmidt1,3 — 1Institute for Integrative Nanosciences, IFW-Dresden, D-01069 Dresden, Germany — 2Department of Electrical and Computer Engineering, Naresuan University, Phitsanulok 65000, Thailand — 3Material Systems for Nanoelectronics, Chemnitz University of Technology, D-09107 Chemnitz, Germany
Nanostructure fabrication techniques can be exploited to generate non-trivially shaped objects with man-designed topological space metrics. A symbiosis of the geometric potential and an inhomogeneous twist renders an observation of the topology effect on the electron ground-state energy in microscale Möbius rings into the realm of experimental verification. We predict a ‘delocalization-to-localization’ transition for the electron ground state as the Möbius ring is made more inhomogeneous [1]. This transition can be quantified through the Aharonov-Bohm quantum-interference effect on the ground-state persistent current as a function of the magnetic flux threading the Möbius ring. Our theoretical considerations may receive practical relevance in view of the emerging experimental realizations of topologically nontrivial manifolds at the nanoscale.
[1] V. M. Fomin, S. Kiravittaya, and O. G. Schmidt, Phys. Rev. B 86, 195421 (2012).