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TT: Fachverband Tiefe Temperaturen
TT 33: Topological Insulators 3 (jointly with HL, MA, and O)
TT 33.13: Vortrag
Mittwoch, 13. März 2013, 12:30–12:45, H16
Charge screening at the surface of a topological insulator: Rb on Bi2Se3 — •Peter Löptien, Lihui Zhou, Jens Wiebe, Alexander A. Khajetoorians, and Roland Wiesendanger — Institute of Applied Physics, University of Hamburg, Germany
Adsorption of Rb atoms on Bi2Se3 leads to the formation of a two-dimensional electron gas (2DEG) in the conduction band at the surface of the topological insulator [1]. We investigated the coverage dependent distribution of the singly charged Rb atoms by low temperature STM. By a statistical analysis of the interatomic distances between the adatoms we quantitatively derived the pair interaction [2], which fits a screened Coulomb potential. Interestingly, screening length and dielectric constant turn out to be rather small, due to the contribution of the 2DEG and topological surface state.
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