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TT: Fachverband Tiefe Temperaturen

TT 33: Topological Insulators 3 (jointly with HL, MA, and O)

TT 33.14: Vortrag

Mittwoch, 13. März 2013, 12:45–13:00, H16

Fabrication and characterization of thin Bi₂Se₃ topological insulators — •Srujana Dusari¹, Philipp Meixner¹, Anna Mogilatenko², Saskia F. Fischer¹, Jaime Sanchez-Barriga³, Lada V. Yashina⁴, Florian Kronast³, Sergio Valencia³, Akin Ünal³, and Oliver Rader³ — ¹Novel Materials, Humboldt Universität zu Berlin, D-12489 Berlin — ²Ferdinand Braun Institut, D-12489 Berlin — ³Helmholtz-Zentrum Berlin für Materialien und Energie, D-12489 Berlin — ⁴Dep. Chemistry, Moscow State University, Russia

Topological insulators (TIs) have electrically insulating states in the bulk and robust conducting states along the edges [1, 2]. The real-life TI samples available today contain residual bulk charge carriers that hinder exploiting their surface properties in device form. The aim of our work is to investigate the controlled combination of dimensionality and designed impurity and metallic defect structures on the quantum transport properties of well known Bi₂Se₃ TIs, in particular with respect to the implications for devices. Here we report preparation and characterization of exfoliated Bi₂Se₃ flakes. The samples are characterized using atomic force microscopy, transmission electron microscopy, and energy-dispersive X-ray spectroscopy. Surface stability and composition are determined using photoemission electron microscopy. Low temperature transport measurements are presented.

[1] C. L. Kane, and E. J. Mele, Phys. Rev. Lett. 95, 226801 (2005).

[2] M. Z. Hasan and J. E. Moore, Annu. Rev. Condens. Matter. Phys. 2: 55-78 (2011).