Regensburg 2013 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 35: Graphene - Characterization and Devices (jointly with DS, HL, MA, and O)

TT 35.12: Vortrag

Mittwoch, 13. März 2013, 12:30–12:45, H17

Electrical interfacing of cells with graphene field effect transistors — •Felix Rolf, Lucas H. Hess, Tobias Schneider, Benno Blaschke, Moritz Hauf, and Jose A. Garrido — Walter Schottky Institut, TU München

The next generation of neuroprosthetic devices will need novel solid-state sensors with improved performance. Increased signal detection capability, better mechanical and physiological compatibility with living tissue, and in general a higher stability in biological environments are among the main requirements. Due to its electronic and electrochemical characteristics, as well as its physico-chemical properties, graphene is one of the most suitable candidates to meet these demanding requirements.

In this talk, we will report on arrays of graphene solution-gated field effect transistors (G-SGFETs) which are able to detect the electrical activity of electrogenic cells. It will be discussed how the combination of high carrier mobilities in graphene and the large interfacial capacitance at the graphene/electrolyte interface results in such high signal sensitivities. Thereby it is possible for instance, to show the generation and propagation of action potentials in cardiomyocyte-like HL-1 cell cultures. Another application is the single cell-transistor coupling using Human Embryonic Kidney (HEK293) cells. In the latter case the response of the G-SGFETs to electrical activity as well as the cell chemical activity will be discussed. Our results confirm that G-SGFETs are able to outperform state-of-the-art devices, suggesting that G-SGFETs can play an important role in future bioelectronic systems.