Regensburg 2013 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 35: Graphene - Characterization and Devices (jointly with DS, HL, MA, and O)

TT 35.4: Talk

Wednesday, March 13, 2013, 10:15–10:30, H17

Electronic transport of metallic thin films and islands on graphene with scanning tunneling spectroscopy — •Anne Holtsch, Hussein Shanak, Haibin Gao, and Uwe Hartmann — Institute for Experimental Physics, Saarland University, P.O. Box 151150, 66041 Saarbrücken

Electronic properties of graphene without and with metallic thin films and islands on top are investigated. The graphene layers are epitaxially grown on rhodium using a chemical vapor deposition (CVD) method. In a second step, metallic thin films and islands (Au) are deposited onto the surface of the graphene layer. Investigations are performed by using scanning tunneling spectroscopy (STS). An introduction to a method for an automated comparison and characterization of different spectroscopic curves is the focus of this presentation. This method will be used to clarify which impact the metallic thin films and islands have on the electronic properties of graphene. Therefore a comparison between the results obtained from graphene samples without and with metalic thin films and islands is presented.