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TT: Fachverband Tiefe Temperaturen

TT 41: Spintronics / Quantum Information: Materials and Methods (jointly with HL)

TT 41.4: Vortrag

Mittwoch, 13. März 2013, 15:45–16:00, H2

Long hole spin lifetime in InGaAs/GaAs quantum wells probed by high field cyclotron resonance spectroscopy — •Oleksiy Drachenko¹, Dmitry Kozlov², Anton Ikonnikov², Kirill Spirin², Vladimir Gavrilenko², Harald Schneider¹, Manfred Helm¹, and Jochen Wosnitza³ — ¹Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany — ²Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia — ³Helmholtz Zentrum Dresden Rossendorf, Dresden High Magnet Field Lab HLD, D-01314 Dresden, Germany

In this paper, we report long, milli-second range, hole spin relaxation time in InGaAs/GaAs quantum wells probed by cyclotron resonance-spectroscopy in high pulsed magnetic fields. In our experiments, we found strong hysteresis in the spectral weights of cyclotron resonance absorption lines when rapidly changing magnetic field is used for the experiment. The hysteresis vanishes when a much slower changing magnetic field is used. We attribute this behavior to a long energy relaxation time between two lowest spin-split hole Landau levels, i.e. a long hole spin relaxation time. We also present transition frequencies calculated using a 4x4 Luttinger Hamiltonian, which confirm our findings.