Regensburg 2013 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
TT: Fachverband Tiefe Temperaturen
TT 46: Graphene - SiC Substrates and Intercalation (jointly with DS, HL, MA, and O)
TT 46.8: Talk
Wednesday, March 13, 2013, 17:45–18:00, H17
Decoupling of Epitaxial Graphene on Ir(111) by Oxygen Intercalation — •Søren Ulstrup1, Rosanna Larciprete2, Paolo Lacovig3, Matteo Dalmiglio3, Marco Bianchi1, Jens Christian Johannsen1, Federico Mazzola1, Liv Hornekär1, Fabrizio Orlando4, Alessandro Baraldi4, Silvano Lizzit3, and Philip Hofmann1 — 1Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, Denmark — 2CNR-Institute for Complex Systems, Roma, Italy — 3Sincrotrone Trieste, Trieste, Italy — 4Physics Department and Center of Excellence for Nanostructured Materials, University of Trieste, and IOM-CNR Laboratorio TASC, Area Science Park, Trieste, Italy
Epitaxial growth of graphene on transition metal surfaces is now a well-established method for obtaining extended layers of high quality graphene. However, interactions between graphene and its metal substrate are unwanted in applications typically requiring a mechanical transfer of the graphene. Here we demonstrate a different strategy based on decoupling the graphene from an Ir(111) substrate by oxygen intercalation. More specifically, we present evidence using photoelectron spectroscopy techniques that the intercalation results in an extended layer of hole-doped quasi free-standing graphene (QFG). Analysis of the electronic self-energy near the Fermi level reveals an extremely weak electron-phonon coupling in QFG. Finally, we find that abrupt deintercalation of oxygen occurs at elevated temperatures, which is accompanied by a modest etching of the graphene lattice.