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TT: Fachverband Tiefe Temperaturen

TT 51: Correlated Electrons: General Theory 1

TT 51.2: Vortrag

Donnerstag, 14. März 2013, 09:45–10:00, H6

Interface spin polarization of Half-metal/Semiconductor heterostructures — •Andreas Held¹, Stanislav Chadov², Igor Di Marco³, and Liviu Chioncel^4,1 — ¹Theoretical Physics III, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg, D-86135 Augsburg, Germany — ²Max-Planck-Institut für Chemische Physik fester Stoffe, Nothnitzer Str. 40, 01187 Dresden, Germany — ³Department of Physics and Astronomy, Uppsala University, Box 516, SE-75120 Uppsala, Sweden — ⁴Augsburg Center for Innovative Technologies, University of Augsburg, D-86135 Augsburg, Germany

Half-metallic/Semiconductor interfaces (Co₂MnAl/CoMnVAl) have been recently proposed as efficient spin injectors based on Heusler materials [1]. We discuss the impact of electronic correlation within the mean field (+U) and beyond (+DMFT) upon the electronic and magnetic properties in this interface. Our results suggest that typical correlations strength encountered in the family of Heusler compounds does not lead to a dramatic depolarization effect.
[1] S. Chadov et. al. PRL 107, 047202 (2011)