Regensburg 2013 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 57: Focused Session: Frontiers of Electronic Structure Theory 6 (jointly with HL and O)
TT 57.7: Vortrag
Donnerstag, 14. März 2013, 12:15–12:30, H36
Electron-hole puddles in the absence of charged impurities — •Marco Gibertini1,2, Andrea Tomadin2, Francisco Guinea3, Mikhail I. Katsnelson4, and Marco Polini2 — 1Theory and Simulations of Materials, École Polytechnique Fédérale de Lausanne, Station 12, 1015 Lausanne, Switzerland — 2NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56126 Pisa, Italy — 3Instituto de Ciencia de Materiales de Madrid (CSIC), Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain — 4Radboud University Nijmegen, Institute for Molecules and Materials, NL-6525 AJ Nijmegen, The Netherlands
It is widely believed that carrier-density inhomogeneities ("electron-hole puddles") in single-layer graphene on a substrate such as quartz are due to charged impurities located close to the graphene sheet. In this talk we demonstrate by using a Kohn-Sham-Dirac density-functional scheme that corrugations in a real sample are sufficient to determine electron-hole puddles on length scales that are larger than the spatial resolution of state-of-the-art scanning tunneling microscopy.