Regensburg 2013 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 58: Poster Session Transport & Matter at Low Temperature
TT 58.50: Poster
Donnerstag, 14. März 2013, 15:00–19:00, Poster D
Electrically tunable charge transport in CVD-grown nanostructures of Bi2Se3 — •Louis Veyrat — IFW-Dresden, Dresden, Germany
Electrical transport in nanostructures of the 3D topological insulator Bi2Se3 is studied as a function of a back-gate voltage. Shubnikov de Haas oscillations indicate the presence of Dirac fermions, reproducing the results of previous studies based on exfoliated crystals [1], but here with a 4-probe geometry. Besides, the simultaneous measure of both the longitudinal and transverse magneto-resistance allows us to compare the different carrier densities infered from Shubnikov-de-Haas oscillations and the Hall resistance. The strong back gate effect on the longitudinal and Hall resistances shows that we can efficiently tune the total carrier density in a nanostructure. Moreover, we can separate the contributions to the conduction from bulk carriers and surfaces states, and evaluate their different mobilities and densities.
[1] Sacépé et al., Nature Comm. 2, 575, (2011)