Regensburg 2013 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
TT: Fachverband Tiefe Temperaturen
TT 61: Topological Insulators 4 (jointly with DS, HL, MA, and O)
TT 61.2: Vortrag
Donnerstag, 14. März 2013, 15:30–15:45, H18
All in-ultra-high-vacuum study of thin film topological insulators: Bi2Te3 — •Katharina Hoefer, Diana Rata, Christoph Becker, and Liu Hao Tjeng — Max Planck Institute for Chemical Physics of Solids
Thin films of topological insulators offer the possibility for the experimental study of the expected spectacular phenomena occurring at the surface of or interface with these materials due to the increased surface to bulk ratio in comparison to bulk crystals. Bulk materials are always defective which leads to extra contributions in conductance.
High quality thin films of Bi2Te3 were grown on α-Al2O3(0001) and BaF2(111) using Molecular Beam Epitaxy. A two-step growth procedure provides high quality epitaxial films despite the large lattice mismatch of 9% to Al2O3; the mismatch to BaF2 is less than 1%.
To protect the surface integrity an all in-ultra-high-vacuum study is crucial. This means not only the preparation and characterization by RHEED, LEED, XPS and ARPES, but especially the transport measurements are performed in-ultra-high-vacuum. The results of this study and ongoing work will be presented.