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TT: Fachverband Tiefe Temperaturen
TT 61: Topological Insulators 4 (jointly with DS, HL, MA, and O)
TT 61.4: Vortrag
Donnerstag, 14. März 2013, 16:00–16:15, H18
Surface state contribution to thermoelectric transport in Bi2Te3 — •Nicki F. Hinsche1, Florian Rittweger1, Peter Zahn3 und Ingrid Mertig1,2 — 1Martin-Luther-Universität, Institut für Physik, Von-Seckendorff-Platz 1, DE-06120 Halle — 2Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, DE-06120 Halle — 3Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 51 01 19, DE-01314 Dresden
Bulk Bi2Te3 and related heterostructures are well known as efficient thermoelectric materials [1,2].
Recent research revealed Bi2Te3 to be a strong topological insulator, i.e. its bulk is insulating,
while its surface is metallic due to the presence of robust gapless surface states [3].
While the spin structure and the low-temperature electrical transport gained much attention,
the physics of the thermoelectric transport is still under debate.
To contribute on this, we studied the electronic structure of the Bi2Te3 surface
with a fully relativistic screened Korringa-Kohn-Rostoker Green’s
function method. The thermoelectric transport properties
were calculated within the relaxation time approximation of the Boltzmann theory.
The influence of temperature and doping on the thermoelectric
properties of the surface state were analysed in detail.
[1] T. M. Tritt et al., MRS bulletin 31, 188 (2006)
N. F. Hinsche et al., Phys. Rev. B 86, 085323 (2012)
H. Zhang et al., Nature Phys. 5, 438 (2009)