Berlin 2014 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 1: Laser development and applications I
Q 1.8: Talk
Monday, March 17, 2014, 12:15–12:30, DO26 207
GaSb-based SESAM mode-locked Tm:YAG ceramic laser — •Alexander Gluth1, Valentin Petrov1, Uwe Griebner1, Günter Steinmeyer1, Jonna Paajaste2, and Mircea Guina2 — 1Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy Berlin — 2ORC, Tampere University of Technology
There is a growing interest in developing ultrafast laser sources with direct emission at mid-infrared wavelengths. In particular, in the 2 um wavelength range where ultrashort pulse generation was already demonstrated using Tm- and Ho-doped gain media. However, so far only active mode-locking has been demonstrated based on the most approved solid-state laser host material: YAG. Acousto-optic modulation produced 35 ps long pulses at 2.01 um [1]. Ceramics were intensively studied leading to a high quality with higher rare earth doping levels with respect to single crystals. Here, we demonstrate passively mode-locked Tm:YAG ceramic lasers using near-surface GaInSb quantum-well SESAMs. This kind of SESAM allows fast carrier relaxation without introducing additional losses. The interband relaxation time was measured to be less than 2 ps. Passive mode-locking was achieved for 4at%- and 10at%-Tm-doped YAG ceramics in a standard X-cavity. Shortest pulses of 3 ps with a maximum average output power of 145 mW at 2012 nm center wavelength were measured. The RF spectrum at the 89 MHz fundamental beat note showed no spurious modulations and a noise floor that was 67 dB below the signal.
[1] J. F. Pinto, L. Esterowitz, and G. H. Rosenblatt, Opt. Lett. 17, 731 (1992).