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Q: Fachverband Quantenoptik und Photonik

Q 16: Poster: Quantum information, micromechanical oscillators, matter wave optics, precision measurements and metrology

Q 16.18: Poster

Montag, 17. März 2014, 16:30–18:30, Spree-Palais

Temperature-dependent zero-phonon line shift and broadening in single silicon vacancy centres in diamond — •Jan Binder, Andreas Dietrich, Kay Jahnke, and Lachlan Rogers — Institute of Quantum Optics, Ulm University

The usability of single silicon vacancy centres in diamond as indistinguishable single photon emitters highly depends on the stability and width of their zero-phonon lines. At low temperatures, excellent stability and narrow linewidth of negatively charged silicon vacancies (SiV⁻) zero phonon lines (ZPLs) in CVD diamond has been demonstrated, yet their temperature dependent behaviour has not been analyzed in depth. The measurements presented here show the spectral behaviour of the SiV⁻ from cryogenic to room temperatures. Furthermore, an attempt is made to identify the line broadening and shifting mechanisms by comparison to theoretical models of elastic spring softening of the excited state[1] and optical dephasing in defect-rich crystals[2].
[1] Hizhnyakov V, Kaasik H and Sildos I, 2002 Phys. Status Solidi b 234 644
[2] Hizhnyakov V and Reineker P 1999 J. Chem. Phys. 111 8131