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Q: Fachverband Quantenoptik und Photonik

Q 18: Laser development and applications III

Q 18.5: Vortrag

Dienstag, 18. März 2014, 11:30–11:45, DO26 207

Photoluminescence excitation and spectral hole burning spectroscopy of silicon-vacancy centers in diamond — •Carsten Arend, Christian Hepp, Jonas Becker, and Christoph Becher — Universität des Saarlandes, Experimentalphysik, D-66123 Saarbrücken

Silicon-vacancy (SiV) centers in diamond are promising sources for single photons because they provide narrow zero-phonon-lines (ZPLs) in the near infrared (738 nm), high photostability, weak phonon coupling and high brightness [1]. At cryogenic temperatures, the ZPL shows a four line fine structure due to the doubly split ground and excited states. Using photoluminescence excitation (PLE) spectroscopy where we scan a narrow-band laser across the fine structure lines and detect fluorescence on the phonon sidebands, we can measure linewidths and splittings of the SiV centers. We here report on the results using this technique on different samples containing ensembles of and single SiV-centers. Due to inhomogeneous broadening of the transitions caused by spectral diffusion, the measured linewidths commonly are in the order of several GHz, whereas the lifetime limit is in the order of 0.1 GHz. We therefore employ spectral hole burning spectroscopy which allows us to measure the homogeneous linewidth.

[1] E. Neu et al., New. J. Phys. 13, 025012 (2011)