Berlin 2014 – wissenschaftliches Programm
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Q: Fachverband Quantenoptik und Photonik
Q 30: Poster: Photonics, laser development and applications, ultrashort laser pulses, quantum effects
Q 30.22: Poster
Dienstag, 18. März 2014, 16:30–18:30, Spree-Palais
Graphene-Based Nanophotonic Devices Embedded In High-Quality Si3N4 Circuits — •Nico Gruhler1, Christian Benz1,3, Houk Jang2, Jong-Hyun Ahn2, Romain Danneau1,3, and Wolfram Pernice1 — 1Institute of Nanotechnology, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen, Germany — 2School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea — 3Institute of Physics, Karlsruhe Institute of Technology, 76049 Karlsruhe, Germany
Si3N4 provides low material absorption even for visible wavelengths and is therefore a suitable material to take advantage of the broadband flat absorption of graphene. Using optimized e-beam lithography processes high quality Si3N4 nanophotonic circuits are realized. Large single-layer CVD graphene films are mechanically transferred onto a nanophotonic chip and via subsequent lithographic structuring many hybrid graphene-photonic devices are fabricated simultaneously. This waveguide-integration of graphene allows for prolonged light-matter interactions. MZIs with extinction ratio beyond 40dB and microring resonators with optical Q factors up to 1.6 × 106 are used for the characterization of the graphene-light interaction. This approach leeds to an absorption ceofficient of 0.067 dB/µm.