Dresden 2014 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 13: Applications of dielectric solids
DF 13.2: Vortrag
Mittwoch, 2. April 2014, 12:10–12:30, GER 37
Ultra-thin Al2O3 passivation layers for solar cell applications — •Andreas Nägelein1, Christian Koppka1, Katja Tonisch1, and Thomas Hannappel1,2 — 1TU Ilmenau, Institut für Physik, Fachgebiet Photovoltaik — 2CiS Forschungsinstitut für Mikrosensorik und Photovoltaik, Erfurt
Thin Al2O3-layers have been shown to provide a high quality passivation on p-type surfaces. Especially for nanowire-solar cells surface-passivation plays a major role.
In order to investigate the quality of Al2O3 produced by atomic layer deposition (ALD) in an MOCVD reactor, p-type silicon (1-5 Ωcm) samples were coated on both sides with three different Al2O3 layer thicknesses (10 nm, 20 nm and 30 nm). UV/VIS measurements were done to determine the optical properties. XPS and FTIR investigations showed the composition of the layers. Passivation quality was proofed by QSSPC and MWPCD. Optical properties were measured by UV/VIS and obtained a transmission of more than 95% over a large wavelength range. QSSPC lifetime measurements showed a maximum lifetime of 388 µs at 30 nm Al2O3. After annealing 30 minutes at 400∘C the lifetime increased to 1.25 ms. Comparable results are expected for nanowire applications.