Dresden 2014 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 18: Dielectric and ferroelectric thin films

DF 18.7: Vortrag

Mittwoch, 2. April 2014, 18:00–18:20, GER 37

Asymmetric oxygen vacancy distribution in CaTiO₃ capacitors — •Andreas Krause¹, Walter M. Weber¹, Uwe Schroeder¹, Johannes Heitmann^1,2, and Thomas Mikolajick^1,3 — ¹NaMLab gGmbh, D-01187 Dresden — ²Institut fuer Angewandte Physik, TU Bergakademie Freiberg — ³Institut fuer Halbleiter- und Mikroelektronik IHM, TU Dresden

CaTiO₃ is a promising material as a high-k dielectric in metal-insulator-metal capacitors, combining a high dielectric constant (k) and relatively low leakage currents. Using various electrodes, CaTiO₃ shows intrinsic differences for both top and bottom charge carrier injection in addition to electrode dependent injection. Therefore, the band offset between valence band of the dielectric and the work function of the electrode material is not the only parameter responsible for leakage currents. As previously stated in literature for SrTiO₃[1], electrodes induce differences in oxygen vacancy distribution in the dielectric. Here, CaTiO₃ exhibits a conduction behavior comparable to SrTiO₃ with different electrodes Pt, C, Ru and TiN. This indicates an universal behavior of high-k perovskites and may be crucial for future device integration.
Kim et al. Understanding of Trap-Assisted Tunneling Current - Assisted by Oxygen Vacancies in RuO_x/SrTiO₃/TiN MIM capacitor for the DRAM application. Memory Workshop, 2012 4th IEEE International