Dresden 2014 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 24: Crystallography in Materials Science (Joint Session with KR)

DF 24.5: Talk

Thursday, April 3, 2014, 16:30–16:45, CHE 184

Focused Ion Beam implantation of Erbium into Y2SiO5 crystals — •Nadezhda Kukharchyk¹, Jasper Rödiger², Arne Ludwig¹, Alexey Ustinov³, Pavel Bushev⁴, and Andreas D. Wieck¹ — ¹Ruhr University Bochum, Bochum — ²RUBION, Bochum — ³Karlsruhe University, Karlsruhe — ⁴University of Saarland, Saarbrücken

In the context of research on quantum computation and information, different systems have been developed and investigated recently. Particular interest is focused on the systems based on the rare earth (RE) elements, which feature semi-shielded 4f-electrons from external crystal fields and therefore possess long optical and microwave coherence time. Among all the REs, exclusively erbium has the transition which falls into Telecom C-Band at 1540 nm. In the present work, we perform Focused Ion Beam (FIB) implantation of Erbium ions into Y2SiO5 substrates. The FIB allows us to have a high control over the implanted pattern and area, as well as the depth and even the choice of the isotopes - which gives high flexibility in the system preparation. Luminescence of the implanted crystals appears to be an effective way to characterize the system. The measurements were performed in the confocal regime with an excitation at 488 nm and detection in the range of 450 nm to 900 nm at room temperature. A marked intensity-to-fluence dependence is observed and compared to the spectra from the grown doped crystals. Additionally the influence of defects and annealing was studied.