Dresden 2014 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 26: Metamorphic structures: Bringing together incompatible materials I (Joint Focus Session with HL and DS)

DF 26.1: Topical Talk

Thursday, April 3, 2014, 09:30–10:00, POT 251

Metamorphic III-V-on-IV structures and its application to optoelectronic devices — Yoshiaki Nakano, •Masakazu Sugiyama, and Takuo Tanemura — Department of Electrical Engineering and Information Systems, University of Tokyo, Japan

There has been a considerable interest to combine merits of different III-V semiconductors with group IV-based materials and devices. One obvious example is the integration of InGaAs FETs with Si MOSFETS for enhancing CMOS performance. Another example is the ”silicon photonics” where III-V materials are integrated on silicon substrates to have them perform light emission and control functions. Such integration is brought about by either heteroepitaxy or wafer bonding. The former is regarded better in terms of manufacturablity but in general more difficult than the latter, and therefore, its applicability has been limited. In this talk, our trial of integrating III-nitrides and III-phosphides/arsenides on silicon and germanium by metal-organic vapor phase epitaxy and wafer bonding is reviewed, together with its application to light emitting, controlling, and receiving devices, including micro lasers on Si and multi-junction solar cells.