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DF: Fachverband Dielektrische Festkörper

DF 26: Metamorphic structures: Bringing together incompatible materials I (Joint Focus Session with HL and DS)

DF 26.3: Vortrag

Donnerstag, 3. April 2014, 10:30–10:45, POT 251

Influence of the substrate quality on the structural properties of short-period GaN/AlGaN superlattices grown by MBE — •Felix Schubert¹, Ulrich Merkel², Thomas Mikolajick^1,2, and Stefan Schmult² — ¹NaMLab gGmbH, Nöthnitzer Straße 64, D-01187 Dresden — ²Institute of Semiconductor and Microsystems, TU Dresden, Nöthnitzer Straße 64, D-01187 Dresden

Short-period AlGaN/GaN superlattices have been established as versatile test structures to investigate the influence of the GaN substrate quality on the structural properties of AlGaN/GaN heterostructures. Of particular interest are surface roughness, layer accuracy and aluminum mole fraction in the MBE-grown superlattices. A variety of GaN substrates prepared by MBE, MOCVD, HVPE and ammothermal growth was investigated. For the best substrate quality theoretically expected properties like narrow high-order satellite peaks and interface fringes can be recovered from high resolution x-ray diffraction scans of the superlattices.