Dresden 2014 – scientific programme
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DF: Fachverband Dielektrische Festkörper
DF 26: Metamorphic structures: Bringing together incompatible materials I (Joint Focus Session with HL and DS)
DF 26.5: Talk
Thursday, April 3, 2014, 11:00–11:15, POT 251
Growth and characterization of non- and semipolar AlInN and possibilities for relaxed buffer layer engineering — •Ernst Ronald Buß1, Uwe Rossow1, Heiko Bremers1, Tobias Meisch2, Ferdinand Scholz2, and Andreas Hangleiter1 — 1Institute of Applied Physics, TU Braunschweig, Germany — 2Institute of Optoelectronics, Ulm University, Germany
The different a/c-ratios of group-III-nitrides open the possibility of strain engineering for relaxed buffer layers of AlInN in non- and semipolar GaN based structures. In this contribution, we present the very first results on low pressure MOVPE grown AlInN on semipolar (1122) GaN templates, m-plane GaN templates, as well as m-plane pseudo-bulk GaN substrates. AlInN layers exhibit a macroscopic tilt due to the activation of basal plane slip for all non-c-plane orientations. For the m-plane case we will show that there is no shear of the unit cells of the different layers of the sample. Growth rates and indium incorporation efficiencies of m-plane and (1122) oriented material could be estimated to be similar and the same as on c-plane GaN. While c- and m-plane AlInN shows extreme roughening with increasing layer thickness, (1122) AlInN does not. Furthermore, we will present first experiments demonstrating a proof of concept of the specific relaxation of AlInN in different in-plane directions for (1122) orientation. Depending on the indium content we are able to initiate relaxation only in [1100] direction for 18% of indium, or [1123] direction for 28% of indium, respectively. All these results make AlInN quite promising for relaxed buffer layers and strain engineering for further growth.