Dresden 2014 – scientific programme

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DF: Fachverband Dielektrische Festkörper

DF 27: Metamorphic structures: Bringing together incompatible materials II (Joint Focus Session with HL and DS)

DF 27.1: Topical Talk

Thursday, April 3, 2014, 15:00–15:30, POT 251

Integration of cubic III/V semiconductors on silicon (001) — •Kerstin Volz — Philipps-Universität Marburg, Fachbereich Physik & Wissenschaftliches Zentrum für Materialwissenschaften

GaP layers on Si(001) can serve as pseudo-substrates for a variety of novel optoelectronic devices, like integrated lasers, solar cells and n-channel layers. The quality of the GaP nucleation layer is a crucial parameter for the performance of such a device. This presentation will summarize our current understanding of III/V heteroepitaxy on Si substrates and give several examples of successful integration of multinary III/V semiconductors on GaP/Si(001) virtual substrates.