DF 27: Metamorphic structures: Bringing together incompatible materials II (Joint Focus Session with HL and DS)
Donnerstag, 3. April 2014, 15:00–16:30, POT 251
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15:00 |
DF 27.1 |
Topical Talk:
Integration of cubic III/V semiconductors on silicon (001) — •Kerstin Volz
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15:30 |
DF 27.2 |
Optical and structural characterization of an InGaN SQW embedded between quaternary InAlGaN barriers of varying In-concentration — •Christopher Karbaum, Frank Bertram, Marcus Müller, Peter Veit, Jürgen Christen, Jürgen Bläsing, Alois Krost, Martin Feneberg, Rüdiger Goldhahn, Jan Wagner, Michael Jetter, and Peter Michler
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15:45 |
DF 27.3 |
Characterization of strained GaN on nanometer scale by IR near field microscopy — •Fabian Gaußmann, Stefanie Bensmann, Jochen Wüppen, and Thomas Taubner
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16:00 |
DF 27.4 |
Measurement of strain in the InGaN/GaN heterogeneous nanostructures — •Tomaš Stankevič, Simas Mickevičius, Mikkel Schou Nielsen, Robert Feidenhans’l, Olga Kryliouk, Rafal Ciechonski, Giuliano Vescovi, Zhaoxia Bi, and Anders Mikkelsen
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16:15 |
DF 27.5 |
Direct correlation of optical and structural properties of InGaN/GaN core-shell microrods by STEM-Cathodoluminescence — •Benjamin Max, Marcus Müller, Gordon Schmidt, Anja Dempewolf, Thomas Hempel, Peter Veit, Frank Bertram, Jürgen Christen, Martin Mandl, Tilman Schimpke, and Martin Strassburg
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