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DF: Fachverband Dielektrische Festkörper

DF 6: High- and low-k-dielectrics (Joint Session with DS)

Dienstag, 1. April 2014, 10:30–11:50, GER 37

	10:30	DF 6.1	Magnetoelectric effect in FeCr2S4 — •Martin Wohlauer, Stephan Krohns, Joachim Deisenhofer, Vladimir Tsurkan, and Alois Loidl
	10:50	DF 6.2	Barium silicate (Ba2SiO4) as high-k dielectric material — •Shariful Islam, Karl Hofmann, and Herbert Pfnür
	11:10	DF 6.3	Comparison of different gate dielectrics for GaN based high electron mobility transistors — •Annett Freese, Stefan Schmult, Andre Wachowiak, and Thomas Mikolajick
	11:30	DF 6.4	The contribution has been withdrawn.