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DF: Fachverband Dielektrische Festkörper

DF 8: Multiferroics I (Joint Session with MA, DS, KR, TT)

DF 8.2: Vortrag

Dienstag, 1. April 2014, 09:45–10:00, BEY 118

Tunneling transport and memristive effects in PbTiO3- based multiferroic tunnel junctions — •Andy Quindeau, Marin Alexe, and Dietrich Hesse — Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany

A gradually tunable resistance effect based on the tunnel electroresistance (TER) of multiferroic tunnel junctions is investigated. The ferroelectric tunnel barrier comprises, a PbTiO3 layer of a few nm thickness, is embedded between two different ferromagnetic layers, viz. La0.7Sr0.3MnO3 and cobalt. In this capacitor geometry an electric bias, applied perpendicularly to the films, results in a direct tunneling current flowing between the two electrodes. The tunnel resistance is dependent on the polarization of the ferroelectric, which is switchable via relatively high voltage pulses. Due to the variation of the pulse parameters a variety of non-volatile resistance states can easily be achieved. These gradually tunable resistance states, characteristic for a memristor device, can be explained by a ferroelectric domain distribution inside the ferroelectric film: Domains with different polarities can coexist inside one capacitor after partial polarization switching and act as parallel connected tunnel barriers with different tunnel resistances. Temperature dependent measurements show the influence of different electron transport mechanisms, which will be discussed. The impact of the memristive states on the tunnel magnetoresistance (TMR) can be shown.