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DF: Fachverband Dielektrische Festkörper
DF 9: Poster Session DF
DF 9.13: Poster
Dienstag, 1. April 2014, 18:30–20:00, P1
Electrical and optical defect spectroscopy on high-k materials — •Patrick Scharf, Alexander Schmid, and Johannes Heitmann — Institute of Applied Physics, TU Bergakademie Freiberg, 09599 Freiberg
Temperature dependent electrical and optical defect spectroscopy on high-k materials, especially on Al2O3 and ZrO2 was performed. High-k layers of varying thickness were realized by atomic layer deposition (ALD). The samples were prepared as MIS (metal-insulator-semiconductor) or MIM (metal-insulator-metal) structures on a silicon substrate. The electric contact to the top electrode was established by ball bonding of a 25 µm thick gold wire on Ti/Al/Ti/Au contact pads. For the MIM samples a 12 nm thick TiN layer was used as bottom electrode.
The samples were characterized by current voltage measurements. Therefore investigations were carried out in the range of room temperature down to 25 K. The current voltage characteristics were found to be strongly temperature dependent. For further investigation of defects in the high-k material and at the high-k/silicon interface, a laser-assisted current voltage method is presented. By optical excitation with an infrared laser and measurement of the resulting current with respect to the incident wavelength, defect states in the band gap of the dielectric can be characterized.