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Dresden 2014 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 12: High- and low-k-dielectrics (Joint Session with DF)

Dienstag, 1. April 2014, 10:30–11:50, GER 37

10:30 DS 12.1 Magnetoelectric effect in FeCr2S4 — •Martin Wohlauer, Stephan Krohns, Joachim Deisenhofer, Vladimir Tsurkan, and Alois Loidl
10:50 DS 12.2 Barium silicate (Ba2SiO4) as high-k dielectric material — •Shariful Islam, Karl Hofmann, and Herbert Pfnür
11:10 DS 12.3 Comparison of different gate dielectrics for GaN based high electron mobility transistors — •Annett Freese, Stefan Schmult, Andre Wachowiak, and Thomas Mikolajick
  11:30 DS 12.4 The contribution has been withdrawn.
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