Dresden 2014 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 20: Focus Session: Emerging oxide semiconductors I (jointly with HL, DF, O)
DS 20.10: Talk
Wednesday, April 2, 2014, 12:45–13:00, POT 081
Schottky contacts on β-Ga2O3 and In2O3 thin films — •Daniel Splith1, Stefan Müller1, Holger von Wenckstern1, Oliver Bierwagen2,3, James S. Speck3, and Marius Grundmann1 — 1Universität Leipzig, Institut für Experimentelle Physik II, Leipzig, Germany — 2Paul Drude Institut, Berlin, Germany — 3Materials Department, University of California, Santa Barbara, USA
Oxide semiconductors like β-Ga2O3 or In2O3 are promising materials for a new generation of transparent electronic devices. Oxide field-effect transistors but also the electrical characterization of these oxides by capacitance-voltage measurements or deep-level transient spectroscopy rely on Schottky contacts (SCs). For our study we fabricated SCs on β-Ga2O3 and In2O3 thin films and investigated their electrical properties. The β-Ga2O3 thin films were grown by pulsed laser deposition on highly conducting (00.1) oriented ZnO:Ga acting as a back contact layer. The In2O3 thin films were grown by molecular beam epitaxy on yttria-stabilized zirconia substrates. We prepared SCs by dc sputtering of different metals. On β-Ga2O3 the I-V characteristics of Cu SCs exhibit high rectification ratios up to 7 orders of magnitude. Temperature dependent measurements between 110 and 320 K yield a mean barrier height of 1.32 eV, which is in accordance to the effective barrier height at a temperature of 550 K, where the ideality factor decreases to 1.03. Due to surface electron accumulation, the realization of SCs on In2O3 is challenging. In a proof of principle experiment we fabricated SCs on In2O3 by reactive sputtering of Au, Pt and Pd with rectification ratios up to 3 orders of magnitude.