Dresden 2014 – scientific programme

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DS: Fachverband Dünne Schichten

DS 20: Focus Session: Emerging oxide semiconductors I (jointly with HL, DF, O)

DS 20.9: Topical Talk

Wednesday, April 2, 2014, 12:15–12:45, POT 081

Combinatorial approach to group-III sesquioxides — •Holger von Wenckstern — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Halbleiterphysik

Semiconducting group-III sesquioxides find potential application as chemical/biological sensors, deep-UV photo-detectors, and within transparent and high-power electronics. Technology for bulk growth of binary Me₂O₃ (Me=Al, Ga, In) exists and first promising devices on homoepitaxial layers have been demonstrated. For the exploration of ternary or quarternary systems thin film technology is required. In this contribution we introduce a facile approach to create lateral continuous composition spread(s) (CCS) within thin films on 2 inch wafers by pulsed-laser deposition (PLD) [1]. We ablate from a single, segmented, rotating target keeping the growth rate is for this approach as high as for conventional PLD. We will illustrate the potential of our CCS-technique and discuss structural, optical and electronic properties of (In,Ga,Al)₂O₃ thin films and their utilization in device demonstrations like rectifiers or photo-detectors.

[1] H. von Wenckstern et al., CrystEngComm 15, 10020 (2013)