DS 20: Focus Session: Emerging oxide semiconductors I (jointly with HL, DF, O)
Wednesday, April 2, 2014, 09:30–13:00, POT 081
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09:30 |
DS 20.1 |
Topical Talk:
Computational design of oxide semiconductors — •Stephan Lany
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10:00 |
DS 20.2 |
Phonon properties of Copper-Oxide phases from first principles — •Marcel Giar, Markus Heinemann, and Christian Heiliger
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10:15 |
DS 20.3 |
Intrinsic point defects in Cu2O - Lifting of Raman selection rules — •Thomas Sander, Christian T. Reindl, and Peter J. Klar
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10:30 |
DS 20.4 |
Effect of Chemical Precursors On the Optical and Electrical Propertiesof p-Type Transparent Conducting Cr2O3:(Mg,N) — Elisabetta Arca, •Karsten Fleischer, Sergey A. Krasnikov, and Igor V. Shvets
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10:45 |
DS 20.5 |
Tailoring the electronic and magnetic structure of doped rutile-TiO2 using p-elements (C,N); A Hybrid DFT study. — •Jacqueline Atanelov, Christoph Gruber, and Peter Mohn
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11:00 |
DS 20.6 |
Magneto-optical characterization of thin films of magnetic oxides prepared via aqueous solution processing — •Peter Richter, Michael Fronk, Paul N. Plassmeyer, Catherine J. Page, Dietrich R.T. Zahn, and Georgeta Salvan
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11:15 |
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Coffee break (15 min.)
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11:30 |
DS 20.7 |
Topical Talk:
Beta-Ga2O3: Single crystal growth and semiconductor applications — •Encarnacion G. Villora, Daisuke Inomata, Stelian Arjoca, Kazuo Aoki, and Kiyoshi Shimamura
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12:00 |
DS 20.8 |
MOCVD grown homo and heteroepitaxial β-Ga2O3 layer studied by transmission electron microscopy — •Robert Schewski, Martin Albrecht, Günter Wagner, Michele Baldini, Zbigniew Galazka, and Reinhard Uecker
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12:15 |
DS 20.9 |
Topical Talk:
Combinatorial approach to group-III sesquioxides — •Holger von Wenckstern
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12:45 |
DS 20.10 |
Schottky contacts on β-Ga2O3 and In2O3 thin films — •Daniel Splith, Stefan Müller, Holger von Wenckstern, Oliver Bierwagen, James S. Speck, and Marius Grundmann
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