Dresden 2014 – scientific programme

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DS: Fachverband Dünne Schichten

DS 24: Focus Session: Resistive Switching by Redox and Phase Change Phenomena I (Memristive devices and new circuit concepts)

DS 24.1: Invited Talk

Wednesday, April 2, 2014, 09:30–10:00, CHE 89

Scaling limits and future prospects of resistive switching devices: From materials to systems — •Victor Zhirnov — Semiconductor Research Corp., Durham, NC, USA

Device scaling and energy consumption during computation has become a matter of strategic importance for modern Information and Communication Technologies (ICT). The central question addressed in this talk is: What is the smallest volume of matter needed for ICT devices, such as memory or logic? The scaling limits of electron-based devices, such as transistors are~5-7 nm due to quantum-mechanical tunneling. Smaller devices can be made, if information-bearing particles are used whose mass is greater than the mass of an electron. Therefore the new principles for ICT devices, scalable to ~1 nm, could be 'moving atoms' instead of 'moving electrons', for example using nanoinonic structures. The nanoionic resistive switching devices may offer a promising path to replace the foundation of today's computing technologies. Examples include memory (ReRAM) and logic (atomic/ionic switches). A related concept, the memristor, is currently being actively explored for different information processing tasks. As will be discussed in this presentation, biological computation is extensively based on heavy particles to represent and process information. Based on the biological computing analogy, future 'neuromorphic' computational architectures could be implemented by using nanoionic devices.