Dresden 2014 – scientific programme

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DS: Fachverband Dünne Schichten

DS 24: Focus Session: Resistive Switching by Redox and Phase Change Phenomena I (Memristive devices and new circuit concepts)

DS 24.2: Talk

Wednesday, April 2, 2014, 10:00–10:15, CHE 89

BiFeO3 bilayer structures for implementing beyond von-Neumann computing — •Tiangui You¹, Yao Shuai², Wenbo Luo², Nan Du¹, Danilo Bürger¹, Ilona Skorupa³, René Hübner³, Stephan Henker⁴, Christian Mayr⁴, René Schüffny⁴, Thomas Mikolajick⁵, Oliver G. Schmidt^1,6, and Heidemarie Schmidt¹ — ¹TU Chemnitz, Chemnitz — ²UESTC, Chengdu, China — ³HZDR, Dresden — ⁴TU Dresden, Dresden — ⁵NaMLab gGmbH, Dresden — ⁶IFW Dresden, Dresden

The conventional von-Neumann architecture, which physically separates processing and memory operations, is limited in so much as the processor cannot execute a program faster than instructions and data can be fetched from and returned to memory[1]. Resistive switching devices[2] are considered as one of the most promising candidates for carrying out the processing and storage simultaneously and at the same device cell. In this work, we present a BiFeO3:Ti/BiFeO3 bilayer structure which shows stable and nonvolatile resistive switching behaviour under both positive and negative bias. With the same writing bias, the bilayer structure shows different resistance state for the different polarity of reading bias. The resistance states are distinguishable and stable enough for the practical applications. For the logic applications, the polarity of reading bias can be used as an additional logic variable, which makes it feasible to program and store all 16 Boolean logic functions simultaneously and into a same single bilayer structure cell in three logic cycles. [1] C. D. Wright, et al., Adv. Funct. Mater., 2013, 23, 2248 [2] A. Bogusz, T. You, et al., accepted in Proc. IEEE (2013)