Dresden 2014 – scientific programme

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DS: Fachverband Dünne Schichten

DS 24: Focus Session: Resistive Switching by Redox and Phase Change Phenomena I (Memristive devices and new circuit concepts)

DS 24.3: Talk

Wednesday, April 2, 2014, 10:15–10:30, CHE 89

Application of the metal-to-insulator transition in VO₂ for neuromorphic circuits — •Marina Ignatov, Martin Ziegler, Mirko Hansen, Adrian Petraru, and Hermann Kohlstedt — Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel, Germany

The negative differential resistance of two-terminal vanadium dioxide (VO₂) devices are investigated for possible applications in neuromorphic circuit architectures. VO₂ was deposited by Pulse Laser Deposition on TiO₂ and Al₂O₃ single crystal substrates. The VO₂ film thickness ranged between 50 nm to 100 nm. Lateral electrodes with a seperation-width ranging from 1 µm to 4 µm were patterned by optical lithography. The observed negative differential resistance is a result of the reversible insulator to metal phase transition in vanadium dioxide due to local Joule heating. In particular, structural and electrical characteristics of different VO₂ devices are discussed in detail. Further, by adding a capacitor in parallel to those devices electrical oscillations at room-temperature were obtained, which enable the emulation of the all-or-nothing spiking behavior of neurons.