DS 24: Focus Session: Resistive Switching by Redox and Phase Change Phenomena I (Memristive devices and new circuit concepts)
Wednesday, April 2, 2014, 09:30–11:00, CHE 89
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09:30 |
DS 24.1 |
Invited Talk:
Scaling limits and future prospects of resistive switching devices: From materials to systems — •Victor Zhirnov
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10:00 |
DS 24.2 |
BiFeO3 bilayer structures for implementing beyond von-Neumann computing — •Tiangui You, Yao Shuai, Wenbo Luo, Nan Du, Danilo Bürger, Ilona Skorupa, René Hübner, Stephan Henker, Christian Mayr, René Schüffny, Thomas Mikolajick, Oliver G. Schmidt, and Heidemarie Schmidt
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10:15 |
DS 24.3 |
Application of the metal-to-insulator transition in VO2 for neuromorphic circuits — •Marina Ignatov, Martin Ziegler, Mirko Hansen, Adrian Petraru, and Hermann Kohlstedt
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10:30 |
DS 24.4 |
High On/Off ratio in ReRAM cells from TiN/TiOx/Al2O3/Pt by atomic layer deposition — •Hehe Zhang, Nabeel Aslam, Rainer Waser, and Susanne Hoffmann-Eifert
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10:45 |
DS 24.5 |
Higher harmonics generation using Au/BiFeO3/Pt metal-insulator-metal (MIM) structure — •N. Du, N. Manjunath, T. You, Y. Shuai, W. Luo, D. Bürger, I. Skorupa, R. Schüffny, C. Mayr, M. Di Ventra, O. Schmidt, and H. Schmidt
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