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DS: Fachverband Dünne Schichten

DS 30: Focus Session: Emerging oxide semiconductors II (jointly with HL, DF, O)

DS 30.1: Topical Talk

Mittwoch, 2. April 2014, 15:00–15:30, POT 081

Electronic properties of the transparent semiconducting oxides Ga2O3 and In2O3 — •Recardo Manzke — Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, 12489 Berlin, Germany

The exploration of oxides from the perspective of semiconductor science and technology offers great opportunities for uncovering new physics as well as developing novel devices with unprecedented performance and functionality. In this talk the transparent semiconducting oxides (TSO) Ga2O3 and In2O3 will be presented. Regarding the electronic structure respectively band structure, crucial progress has been reached in the last years. Here Ga2O3 and, in particular, the (100) surface behaves like expected for a large-gap semiconductor. Against this, for In2O3 the occurrence of a charge accumulation layer is heavily debated. This possibly will restrict their potential for applications.