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DS: Fachverband Dünne Schichten

DS 30: Focus Session: Emerging oxide semiconductors II (jointly with HL, DF, O)

DS 30.4: Vortrag

Mittwoch, 2. April 2014, 16:00–16:15, POT 081

Metal contacts on the beta-Ga2O3 single crystal (001) surface — •Stephan Machulik¹, Maryam Nazarzadehmoafi¹, Mansour Mohamed², Andreas Siebert¹, Christoph Janowitz¹, Zbigniew Galazka³, and Recardo Manzke¹ — ¹Humboldt Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin — ²Assiut University, Physics Department, Faculty of Science, Assiut 71516, Egypt — ³Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, Berlin, Germany

Results of band structure measurements on beta-Ga2O3 single crystals were in good agreement with theoretical calculations [1], indicating a good theoretical understanding of this material. For application purposes in semiconductor technologies both Schottky and Ohmic metal-semiconductor contacts are required. ARPES and I/U measurements performed on n-doped Au-beta-Ga2O3(001) contacts confirmed Schottky-like behavior with a barrier height of 1.01 eV [2]. Motivated by the lower work function of silver we performed an ARPES study of Ag-beta-Ga2O3(001). The results point to a distinctly lower Schottky barrier, but the contact was not yet Ohmic. Additionally the work function depending on the layer thickness of Ag was studied.

[1] M. Mohamed, C. Janowitz, I. Unger, R. Manzke, Z. Galazka, R. Uecker, R. Fornari, J.R. Weber, J.B. Varley, C.G. van de Walle, Appl. Phys. Lett. 97, 211903 (2010)

[2] M. Mohamed, K. Irmscher, C. Janowitz, Z. Galazka, R. Manzke, R. Fornari, Appl. Phys. Lett. 101, 132106 (2012)